Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl2Ga2S3Se crystals |
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| Institution: | 1. Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara, Turkey;2. Department of Physics, Nevsehir Haci Bektas Veli University, 50300 Nevsehir, Turkey;3. Department of Physics, Middle East Technical University, 06800 Ankara, Turkey;4. Virtual International Scientific Research Centre, Baku State University, 1148 Baku, Azerbaijan;1. The National Institute for Theoretical Physics, School of Physics and Mandelstam Institute for Theoretical Physics, University of the Witwatersrand, Johannesburg, Wits 2050, South Africa;2. Johnson Matthey Research (PTY) Limited, Scientia, CSIR Campus, Meiring Naude Road, Brummeria, Pretoria, South Africa;1. Department of Pediatric Neurology, School of Medicine, Dokuz Eylul University, Izmir, Turkey;2. University of Cologne, University Hospital Cologne, Institute of Human Genetics, Cologne, Germany;3. University of Cologne, Center for Molecular Medicine Cologne (CMMC), Cologne, Germany;4. University of Cologne, University Hospital Cologne and Faculty of Medicine, Department of Pediatrics, Cologne, Germany;5. University of Cologne, Center for Rare Diseases Cologne (ZSEK), Cologne, Germany;6. Molecular Neurogenomics Group, VIB-UAntwerp Center for Molecular Neurology, University of Antwerp, Universiteitsplein 1, 2610 Antwerpen, Belgium;7. Department of Medical Chemistry and Biochemistry, Medical University-Sofia, ul. Zdrave 2, 1431, Sofia, Bulgaria;1. Department of Computational Technique and Automated System Software, Don State Technical University, 1 Gagarin Square, 344010 Rostov-on-Don, Russian Federation;2. Department of Electrical Engineering and Electronics, Don State Technical University, 1 Gagarin Square, 344010 Rostov-on-Don, Russian Federation;3. Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam;4. Faculty of Electrical & Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam;5. Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, 03142 Kyiv, Ukraine;6. Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, 13 Voli Avenue, 43025 Lutsk, Ukraine;1. School of Materials Science and Engineering, State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation, Southwest Petroleum University, Chengdu 610500, China;2. State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming 650106, China;1. Department of Physics and Astronomy, University of Padova, Padova, Italy;2. Department of Computer Science, University of Verona, Verona, Italy;3. Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, China |
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| Abstract: | Thermoluminescence (TL) properties of Tl2Ga2S3Se layered single crystals were researched in the temperature range of 290–770 K. TL glow curve exhibited two peaks with maximum temperatures of ~373 and 478 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers associated with these peaks. Applied methods were in good agreement with the energies of 780 and 950 meV. Capture cross sections and attempt-to-escape frequencies of the trapping centers were reported. An energy level diagram showing transitions in the band gap of the crystal was plotted under the light of the results of the present work and previously reported papers on photoluminescence, thermoluminescence and thermally stimulated current measurements carried out below room temperature. |
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| Keywords: | Semiconductors Crystal growth Luminescence Defects |
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