Dephasing rate in an InAs/GaAs single-electron quantum dot qubit |
| |
Authors: | Liuxian?Pan,Shushen?Li mailto:sslee@red.semi.ac.cn" title=" sslee@red.semi.ac.cn" itemprop=" email" data-track=" click" data-track-action=" Email author" data-track-label=" " >Email author,Jinlong?Liu,Zhichuan?Niu,Songlin?Feng,Houzhi?Zheng |
| |
Affiliation: | 1. Department of Physics, Yiyang Teacher's College, Yiyang 413049, China 2. National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| |
Abstract: | ![]() We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of InAs/GaAs quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. Moreover, static electric field is found to efficiently prolong decoherence time. As a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kV/cm if only vacuum fluctuation is taken as the main source for decoherence. Our calculated results are useful for guiding the solid-state implementation of quantum computing. |
| |
Keywords: | quantum dot quantum computing decoherence |
本文献已被 万方数据 SpringerLink 等数据库收录! |
|