首页 | 本学科首页   官方微博 | 高级检索  
     


Dephasing rate in an InAs/GaAs single-electron quantum dot qubit
Authors:Liuxian?Pan,Shushen?Li  mailto:sslee@red.semi.ac.cn"   title="  sslee@red.semi.ac.cn"   itemprop="  email"   data-track="  click"   data-track-action="  Email author"   data-track-label="  "  >Email author,Jinlong?Liu,Zhichuan?Niu,Songlin?Feng,Houzhi?Zheng
Affiliation:1. Department of Physics, Yiyang Teacher's College, Yiyang 413049, China
2. National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract:
We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of InAs/GaAs quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. Moreover, static electric field is found to efficiently prolong decoherence time. As a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kV/cm if only vacuum fluctuation is taken as the main source for decoherence. Our calculated results are useful for guiding the solid-state implementation of quantum computing.
Keywords:quantum dot  quantum computing  decoherence
本文献已被 万方数据 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号