InAs单层和亚单层结构中的自旋动力学研究

利用偏振时间分辨光谱和时间分辨Kerr旋转谱，研究了GaAs中的InAs单层和亚单层的电子自旋动力学.实验发现，在非共振激发条件下，厚度为1/3单层的InAs亚单层中电子自旋弛豫寿命长达3.4ns，而1个单层厚的InAs层的电子自旋寿命只有0.48ns；而在共振激发条件下，亚单层结构中的电子自旋寿命大大减少，只有70ps，单层InAs中电子自旋寿命没有显著变化.分析表明，低温下InAs单层和亚单层结构中，Bir-Aronov-Pikus(BAP)自旋弛豫机理占主导地位.通过改变材料结构特性和激发条件来改变电子空穴的空间相关性，从而达到控制自旋弛豫的目的. 关键词： InAs亚单层 自旋弛豫 BAP机理

Spin relaxation dynamics in InAs monolayer and submonolayer

By using time-resolved photoluminescence and time-resolved Kerr rotation, we have studied the unique electron spin dynamics in InAs monolayer (ML) and submonolayer (SML), which were sandwiched in GaAs matrix. Under non-resonant excitation, the spin relaxation lifetimes of 3.4ns and 0.48ns were observed for 1/3ML and 1ML InAs samples, respectively. More interestingly, the spin lifetime of the 1/3ML InAs decreased dramatically under resonant excitation, down to 70ps, while the spin lifetime of the 1ML sample did not vary much, changing only from 400 to 340ps. These interesting results come from the different electron-hole interactions caused by different spatial electron-hole correlation, and they provide a direct evidence of the dominant spin relaxation process, i.e. the BAP mechanism. Furthermore, these new results may provide a valuable enlightenment in controlling the spin relaxation and in seeking new material systems for spintronics application.