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Dielectric/Semiconductor Interfacial p‐Doping: A New Technique to Fabricate Solution‐Processed High‐Performance 1 V Ambipolar Oxide Transistors |
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| Authors: | Nitesh K Chourasia Anand Sharma Nila Pal Sajal Biring Bhola N Pal |
| Abstract: | |
| Keywords: | ambipolar transistors complementary metal– oxide– semiconductor dielectrics low-voltage metal– oxide sol– gel |