Townsend coefficient,escape curve,and fraction of runaway electrons in copper vapor

Ionization and drift characteristics of electrons in copper vapor in the presence of an external electric field are analyzed. In contrast to normal gases, in copper vapor, the excitation energy of lower states is significantly lower than the ionization potential and the excitation cross section is several times greater than the ionization cross section at the incident-electron energy on the order of the ionization energy. This can affect the characteristics of electron bunching in gas. It is demonstrated that, as in previously studied gases, the notion of the Townsend coefficient remains meaningful even in the presence of strong fields at which the electric force exceeds the electron drag force acting in gas. The dependences of the main ionization and drift characteristics on the reduced field strength, the escape curve (which separates the region of effective electron multiplication and the region where electrons leave the discharge gap without multiplication), and the curves of equal efficiency for the formation of runaway electrons are obtained. It is demonstrated that a relatively high excitation cross section of copper levels leads to a sharper peak on the dependence of the Townsend coefficient on the field strength and a narrower region of the effective electron multiplication in comparison with previously studied gases.