Induced growth of high quality ZnO thin filmsby crystallized amorphous ZnO

This paper reports the induced growth of high quality ZnO thin filmby crystallized amorphous ZnO. Firstly amorphous ZnO was prepared bysolid-state pyrolytic reaction, then by taking crystallizedamorphous ZnO as seeds (buffer layer), ZnO thin films have beengrown in diethyene glycol solution of zinc acetate at 80,du. X-rayDiffraction curve indicates that the films were preferentiallyoriented [001] out-of-plane direction of the ZnO. Atomic forcemicroscopy and scanning electron microscopy were used to evaluatethe surface morphology of the ZnO thin film. Photoluminescencespectrum exhibits a strong ultraviolet emission while the visibleemission is very weak. The results indicate that high quality ZnOthin film was obtained.