CMOS阵列响应过程中的电串扰特性研究

在利用CMOS阵列探测器成像时,探测阵列单元间的串扰将直接影响器件成像质量。为了更好地了解串扰对器件响应过程的影响,针对CMOS图像传感器的电串扰特性进行了分析,建立了电串扰数学分析模型,对电串扰的大小进行了定量计算。具体分析了不同扩散长度、感光面积、耗尽层宽度、像素尺寸和温度对电串扰的影响。分析结果表明,感光面积、耗尽层宽度与像素尺寸对电串扰的影响最大,扩散长度和温度对电串扰的影响相对较小。感光面积由3.8μm2增加到12.8μm2后,归一化的电串扰减小了约13%;像素尺寸由7μm×7μm增加为15μm×15μm时,电串扰增加了约95.4%;温度由100K增加到180K后,电串扰下降了约0.6%。

Research on electrical crosstalk of CMOS array

Crosstalk is the key parameter affecting the imaging quality of CMOS array detector in imaging applications. In order to understand the impact of crosstalk on the response of devices, the characteristics of electrical crosstalk of the CMOS image sensors are analyzed. The mathematical analysis model of the electrical crosstalk is established, and the amplitude of electrical crosstalk is calculated. The effects of parameters (including diffusion length, active area, depletion depth, pixel size and temperature) on the electrical crosstalk are studied. The results show that active area, depletion depth and pixel size have a bigger impact on electrical crosstalk compared with diffusion length and temperature. When the active area changes from 3.8 m2 up to 12.8 m2, the electrical crosstalk reduces about 13%; the change of pixel size, from 7 m7 m to 15 m15 m, makes it increase by 95.4%; and the temperature rises from 100 K to 180 K, the electrical crosstalk decreases by 0.6%.