Intervalley transfers of hot electrons in silicon below 77 K |
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| Authors: | J.P. Nougier M. Rolland D. Gasquet |
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| Affiliation: | Centre d''Etudes d''Electronique des Solides, (Associé au Centre National de la Recherche Scientifique) Université des Sciences et Techniques du Languedoc, 34060 Montpellier Cedex, France |
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| Abstract: | Intervalley rate transfer along 〈100〉 directions is deduced from conductivity measurements versus electric field for different impurity concentrations ND-NA at lattice temperatures T ? 77 K. The maximum rate transfer plotted versus T reaches 1 at T < 25 K and does not depend on ND-ND for ND-NA ? 2 × 1014crmcm?3. |
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