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Technology of manufacturing micropixel avalanche photodiodes and a compact matrix on their basis |
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| Authors: | Z Sadygov A Ariffin F Akhmedov N Anfimov T Bokova A Dovlatov I Zheleznykh F Zerrouk R Mekhtieva A Ol’shevskii A Sadygov A Titov V Chalyshev M Troitskaya |
| Institution: | 1. Joint Institute for Nuclear Research, Dubna, Moscow oblast, Russia 2. Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Republic of Azerbaijan 6. Zecotek Photonics Pte, Ltd., Singapore, Singapore 5. Institute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku, Republic of Azerbaijan 3. Institute for Nuclear Research, Russian Academy of Sciences, Moscow, Russia 4. Dukhov All-Russia Research Institute of Automatics, Moscow, Russia |
| Abstract: | A technology for manufacturing a new micropixel avalanche photodiode (MAPD) with deeply buried pixels (including two epitaxial layers between which an array of n +) regions is formed by ionic doping) is described. A new method for manufacturing the compact MAPD matrices with minimum dead zone is proposed. |
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