980nm OPS-VECSEL关键参数的理论分析

光抽运半导体垂直外腔面发射激光器(Optically Pumped Semiconductor Vertical External Cavity SurfaceEmission Laser)的输出特性受到诸多参数的影响,理论分析和模拟显得尤为重要.设计了一种以808 nm二极管激光耦合模块为光抽运光源,In_0.159Ga_0.841As/GaAs_0.94P_0.06为增益介质的980 nm光抽运垂直外腔面发射激光器,并借助于PICS3D软件计算了器件各种特性参数.分析了芯片半径、量子阱的周期数以及外腔镜反射率对器件性能的影响,特别是对阈值和光-光转换效率的影响.模拟结果表明,器件的半径影响光-光转换效率.量子阱个数和外腔镜反射率对器件的输出功率和光-光转换效率都有影响,所以要根据实际需要,设计、生长结构和进行实验.

Theoretical Analysis of Key Parameters of 980 nm Optically Pumped Semiconductor Vertical External Cavity Surface Emitting Laser

The performance of optically pumped semiconductor vertical external-cavity surface emitting laser(OPS-VECSEL) is influenced by many parameters,so the theoretical analysis and simulation are very important.We constructed a 980 nm optically pumped semiconductor vertical external-cavity surface emitting laser(OPS-VECSEL) with active region of In0.159Ga0.841As/GaAs0.94P0.06 system pumped by 808 nm laser diode module.Employing the PICS3D software,the characteristic parameters of OPS-VECSEL were calculated.The performances of device especially the threshold and the optical-optical conversion efficiency were influenced by the chip radius,the number of quantum well and the reflectivity of external-cavity mirror.Calculation and analysis show that the chip radius affect optical-optical conversion efficiency.The output power and optical-optical conversion efficiency are influenced by the number of quantum wells and the reflectivity of external-cavity mirror.Thus we should design and grow the laser structure according to the need.