On the mechanism of electroluminescence emission by porous silicon layers |
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Authors: | Jaime González Velasco |
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Institution: | (1) Facultad de Ciencias, Departamento de Química, Universidad Autónoma de Madrid, C-IX-503, 28049 Canloblanco, Madrid, Spain |
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Abstract: | The analytical treatment of a model considering the electrooxidation of p-porous silicon layers under galvanostatic conditions
is able to give account of experimental facts such as the shape and location of the electroluminescence peak as well as of
the spectral shift of the electroluminescence peak produced by oxidation. The proposed model considers electroluminescence
to be the result of electron injection into the conduction band by an adsorbed intermediate produced by electrooxidation of
the surface coverage with hydrogen or siloxene of the silicon nanocrystallites. The access of holes to the surface is made
possible by low accumulation layer conditions and is the rate determining step in the electroluminescence mechanism. In this
way it is possible to give a satisfactory explanation to the shift towards the blue experimented by the electroluminiscence
emission maximum as a consequence of electrooxidation. |
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Keywords: | Electroluminescence mechanism porous silicon emission blue shift |
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