Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties |
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| Institution: | 1. School of Materials Science and Engineering, Seoul National University, Seoul 151-742, South Korea;2. School of Physics, Seoul National University, Seoul 151-742, South Korea;3. Hanvac Corporation, 104-6, Moonji-Dong, Yusung-Gu, Taejon 305-380, South Korea;4. Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, South Korea;1. Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences de Monastir 5019, Université de Monastir, Tunisia;2. SATIE, UMR 8029 CNRS-ENS Cachan-Cnam, 292 Rue Saint-Martin, 75003 Paris, France;3. CNRS, UMI 2958 Georgia Tech – CNRS, 57070 Metz, France;4. Université de Lorraine, Centrale Supelec, LMOPS, EA4423, 57070 Metz, France;1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People''s Republic of China;2. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, People''s Republic of China;3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, People''s Republic of China;4. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, People''s Republic of China;5. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, People''s Republic of China;6. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People''s Republic of China;1. Key Laboratory of Advanced Functional Materials of Nanjing, Nanjing Xiaozhuang University, Nanjing 211171, China;2. Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China;1. Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences de Monastir 5019, Université de Monastir, Tunisia;2. CNRS, UMI 2958 Georgia Tech-CNRS, 57070 Metz, France;3. Université de Lorraine, Centrale Supelec, LMOPS, EA4423, 57070 Metz, France |
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| Abstract: | GaN epitaxial layers were grown by metalorganic chemical vapor deposition with preheated ammonia as a group V source. The growth rates of GaN epilayers were little affected when ammonia preheater temperature was varied from room temperature to 1000 °C, however, their electrical properties as well as source materials utilization efficiency was significantly improved by using preheated ammonia. GaN epilayers grown with preheated ammonia showed excellent structural and optical properties. |
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