Thermoelectric and galvanomagnetic investigations of VI group semiconductors Se and Te at high pressure up to 30 GPa期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Thermoelectric and galvanomagnetic investigations of VI group semiconductors Se and Te at high pressure up to 30 GPa

Affiliation:	1. Defence Metallurgical Research Laboratory, Hyderabad 500058, India;2. Centre for High Pressure Research, School of Physics, Bharathidasan University, Trichy 600026, India;1. CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012, India;2. AcSIR at CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012, India;3. School of Basic and Applied Sciences, K. R. Mangalam University, Sohna Road, Gurgaon 123103, Haryana, India;1. Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan, ROC;2. Faculty of Basic Sciences, Can Tho University of Medicine and Pharmacy, 179 Nguyen Van Cu Street, Can Tho, Viet Nam;3. Institute of Physics, National Chiao Tung University, Hsinchu, 30010, Taiwan;4. Department of Materials Science and Engineering, I-Shou University, Kaohsiung, 840, Taiwan;5. Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei, 10601, Taiwan;6. Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784, Sofia, Bulgaria, EU;1. Department of Solid State Magnetism, Institute of Natural Sciences and Mathematics, Ural Federal University, 620002 Ekaterinburg, Russia;2. Department of Magnetism and Magnetic Nanomaterials, Ural Federal University, 620002 Ekaterinburg, Russia;3. Institute of Metal Physics, UB RAS, 620990 Ekaterinburg, Russia;4. SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao, Spain;5. Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), 48080 Bilbao, Spain;1. College of Physics and Electronics, Gannan Normal University, Ganzhou 341000, PR China;2. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, PR China;3. Institute of Optoelectronic Materials and Technology, Gannan Normal University, Ganzhou 341000, PR China;4. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China

Abstract:	At ultrahigh pressures up to 30 GPa the thermomagnetic Nernst–Ettingshausen effect was measured for Te and Se samples in the vicinity of semiconductor–metal phase boundary. The significant longitudinal and transverse Nernst–Ettingshausen effects observed for both semiconductors allowed one to estimate the scattering parameter for charge carriers. The increase in hole mobility obtained from longitudinal and transverse Nernst–Ettingshausen effects being consistent with the growth of magnetoresistance under pressure gave confirmation to the decrease in the effective mass of holes at the closure of direct semiconductor gap.

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