首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Electronic structure and perturbations: Interpretation in the SiO valence states
Authors:JM Robbe  J Schamps  H Lefebvre-Brion  G Raseev
Institution:1. Centre de Mécanique Ondulatoire Appliquée, 23, rue du Maroc, 75019 Paris, France;2. Laboratoire de Photophysique Moléculaire (Bât. 213), Faculté des Sciences d''Orsay, 91405 Orsay, France
Abstract:Using SCF-CI wavefunctions, we have calculated energies and spectroscopic constants of low-lying states of SiO. Special attention has been paid to the 3Π states and has led to the prediction of a new state lying close to the observed c3Πi state. Ab initio calculations of parameters characteristic of the perturbations occurring between the valence states of SiO have been performed and compared to experimental deperturbation analysis of Field, Lagerqvist, and Renhorn.
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号