Non-reactive metal/semiconductor interfaces: a combined AES,AFM andPAC study |
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| Authors: | G. Krausch J. Colchero T. Detzel R. Fink B. Luckscheiter U. Wöhrmann G. Schatz |
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| Affiliation: | (1) Fakultät für Physik, Universität Konstanz, D-78434 Konstanz, Germany;(2) Present address: Max-Planck-Institut für Plasmaphysik, D-8000 Munich, Germany;(3) Present address: Fysiska Institutionen, Uppsala Universitet, S-75121 Uppsala, Sweden |
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| Abstract: | Thin In films on Ge(100), Si(100) andSi(111) are investigated using Auger-electron spectroscopy (AES), atomic force microscopy (AFM) andperturbed  -angular correlation (PAC) spectroscopy, respectively. The growth mode of the metal films is characterized by in situ AES measurements, indicating distinct differences between the different substrate surfaces. Additional AFM investigations are used to monitor the film topography at higher metal coverage. Finally, the local crystalline structure of the films is studied by the PAC technique. |
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