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Influence of Ga+ ion irradiation on the magnetisation reversal process and magnetoresistance in CoFe/Cu/CoFe/IrMn spin valves |
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| Authors: | Qi Xian-Jin Wang Yin-Gang Miao Xue-Fei Li Zi-Quan Huang Yi-Zhong |
| Affiliation: | College of Materials Science and Technology, Nanjing University ofAeronautics and Astronautics, Nanjing 210016, China; Department of Materials, Oxford University, Oxford OX1 3PH, UK;School of Materials Science and Engineering, Nanyang Technological University, Singapore |
| Abstract: | Ga+ ion irradiation is performed on the surfaces ofIrMn-based spin valves and the effects of ion irradiation onthe magnetisation reversal process and magnetoresistance (MR) areinvestigated. The results show that the exchange bias field andmagnetoresistance ratio of the spin valve decrease with the increaseof ion dose. The width of the forward step between the free layer andthe pinned layer becomes gradually smaller with the increase of ion dosewhilst the recoil step tends to be narrower with ion dose increasingup to 6× 1013 ions/cm2 and the step disappearsafterwards. Two peaks in the R--H curve are found to beasymmetric. |
| Keywords: | ion irradiation magnetisation reversal magnetoresistance exchange bias |
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