首页 | 本学科首页   官方微博 | 高级检索  
     

BaTiO3铁电体中辐射位移效应的分子动力学模拟
引用本文:马颖,孙玲玲,周益春. BaTiO3铁电体中辐射位移效应的分子动力学模拟[J]. 物理学报, 2011, 60(4): 46105-046105
作者姓名:马颖  孙玲玲  周益春
作者单位:湘潭大学材料与光电物理学院,湘潭 411105
基金项目:国家自然科学基金(批准号:10702059),教育部博士点新教师基金(批准号:20070530009),教育部留学回国人员科研启动基金(批准号:2008890),国家博士后科学基金(批准号:20090451102)和湘潭大学材料科学与工程博士后流动站资助的课题.
摘    要:运用基于壳模型的分子动力学方法研究了BaTiO3铁电体中的辐射位移效应.采用O原子作为初级击出原子,模拟了当初级击出原子能量为1 keV时体系内缺陷的产生和演化.模拟结果表明,当入射方向为[001]时,体系内产生的缺陷最多.在所有缺陷中,以O缺陷的含量为最高,达80%以上.同时,这些缺陷的产生并不显著改变体系的自发极化强度,对体系的极化翻转过程也基本没有影响.在外电场作用下,观察到了显著的缺陷迁移.关键词:分子动力学3铁电体')" href="#">BaTiO3铁电体辐射位移效应

关 键 词:分子动力学  BaTiO3铁电体  辐射位移效应
收稿时间:2010-03-19

Molecular dynamics simulation of radiation displacement effect in BaTiO3 ferroelectrics
Ma Ying,Sun Ling-Ling,Zhou Yi-Chun. Molecular dynamics simulation of radiation displacement effect in BaTiO3 ferroelectrics[J]. Acta Physica Sinica, 2011, 60(4): 46105-046105
Authors:Ma Ying  Sun Ling-Ling  Zhou Yi-Chun
Affiliation:Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan 411105,China;Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan 411105,China;Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan 411105,China
Abstract:Radiation displacement effect is studied using shell model molecular dynamics simulations. Using oxygen atom as a primary knock-on atom, the creation and the evolution of various defects in the system corresponding to the primary knock-on atom(PKA) energy of 1 keV are studied. The results show that a largest number of defects are created when the incidence is along the [001]direction. Among all the defect species, oxygen atom defects are dominant, and its concentration reaches 80%. The creation of defects does not change the spontaneous polarization of the system significantly, and the polarization reversal also changes little. Defect migration is observed under an applied electric field.
Keywords:molecular dynamics  BaTiO3 ferroelectrics  radiation displacement effect
本文献已被 CNKI 万方数据 等数据库收录!
点击此处可从《物理学报》浏览原始摘要信息
点击此处可从《物理学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号