| In组分梯度渐变的n-i-p结构InGaN太阳能电池性能研究 |
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| 引用本文： | 鲁麟,李明潮,许福军,江明,陈其工.In组分梯度渐变的n-i-p结构InGaN太阳能电池性能研究[J].发光学报,2016,37(6):682-687. |
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| 作者姓名： | 鲁麟 李明潮 许福军 江明 陈其工 |
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| 作者单位： | 1. 安徽工程大学 电气工程学院, 安徽 芜湖 241000;
2. 安徽工程大学 检测技术与节能装置安徽省重点实验室, 安徽 芜湖 241000;
3. 北京大学物理学院 宽禁带半导体研究中心, 北京 100871 |
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| 基金项目： | 国家自然科学基金(61306108)，教育部留学回国人员科研启动基金(2013693) |
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| 摘 要： | 为了优化InGaN太阳能电池结构并有效地指导实际电池的制备,研究了n-i-p(p层在下)In组分梯度渐变结构的InGaN太阳能电池的性能特征。通过APSYS软件模拟计算,对比采用p-i-n渐变结构(p层在上)和n-i-p渐变结构(p层在下)的InGaN太阳能电池的器件性能。结果表明,采用n-i-p渐变结构的InGaN电池,i-InGaN层在低In组分下没有明显的优势,而在高In组分下的器件性能较好。在In组分为0.62时,转换效率最高达到8.48%。分析表明,p层在下的n-i-p渐变结构使得InGaN电池的极化电场与耗尽区的内建电场方向一致,有利于载流子的输运。采用n-i-p渐变结构有利于制备高性能的InGaN太阳能电池。
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| 关 键 词： | InGaN 太阳能电池 n-i-p结构 |
| 收稿时间： | 2016-01-14 |
n-i-p Type InGaN Solar Cells with Graded In Composition |
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| LU Lin,LI Ming-chao,XU Fu-jun,JIANG Ming,CHEN Qi-gong.n-i-p Type InGaN Solar Cells with Graded In Composition[J].Chinese Journal of Luminescence,2016,37(6):682-687. |
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| Authors: | LU Lin LI Ming-chao XU Fu-jun JIANG Ming CHEN Qi-gong |
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| Institution: | 1. College of Electrical Engineering, Anhui Polytechnic University, Wuhu 241000, China;
2. Anhui Key Laboratory of Detection Technology and Energy Saving Devices, Anhui Polytechnic University, Wuhu 241000, China;
3. Research Center for Wide Gap Semiconductor, School of Physics, Peking University, Beijing 100871, China |
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| Abstract: | In order to optimize InGaN solar cell ( SC ) structures and effectively guide the prepara-tion, the properties of n-i-p InGaN SC structures with graded In composition were investigated. Through APSYS simulation software, the performances of p-i-n and n-i-p SC structures with graded In composition were compared. It is found that n-i-p structures don’t have obvious advantage in the device performance over p-i-n ones when In composition of i-InGaN layer is low, which yet presents better performance with higher In composition. When In composition is 0. 62, the SC conversion ef-ficiency reaches 8 . 48%. The further analysis indicates that the polarization electric field in InGaN layer has the same directions with the built-in one in the depletion region for the case of n-i-p SC structures, which is very beneficial for carrier transport. The n-i-p SC structures with graded In composition are proven to be beneficial for high performance InGaN SCs. |
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| Keywords: | InGaN solar cell n-i-p structure |
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