Impact ionization in silicon dioxide at fields in the breakdown range |
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| Authors: | P Solomon N Klein |
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| Institution: | Department of Electrical Engineering, Technion, Israel Institute of Technology, Haifa, Israel |
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| Abstract: | A new method is described for the evaluation of impact ionization coefficients, α, in insulators by the measurement of current transients which grow due to impact ionization. Impact ionization coefficients for SiO2 evaluated by this method obey roughly the relation α = α0 exp (?H/F) where F is the field. For p type substrates α0 = 6.5 × 1011cm?1 and H = 1.8 × 108V/cm. |
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