Investigation of induced parallel magnetic anisotropy at low deposition temperature in Ba-hexaferrites thin films |
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Authors: | Safia Anjum M Shahid RafiqueM Khaleeq-ur-Rahman K SirajArslan Usman SI Hussain S Naseem |
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Institution: | a Advanced Physics Laboratory, Department of Physics, University of Engineering and Technology, Lahore 54890, Pakistan b Department of Physics, Lahore College for Women University, Lahore 54600, Pakistan c Department of Physics, Forman Christian College, Lahore 54600, Pakistan d Microelectronics Centre University of the Punjab, Lahore 54590, Pakistan |
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Abstract: | In this paper we present the effect of low substrate temperature on structural, morphological, magnetic and optical properties of Ba-hexaferrite thin films. Films were deposited on single crystal Silicon (1 0 0) substrate employing the Pulsed Laser Deposition (PLD) technique. The structural, morphological, magnetic and optical properties are found to be strongly dependent on substrate temperature. The low substrate temperatures (room temperature to 200 °C) restrict the formation of larger grains. For the higher substrate temperature i.e., 400 °C, the grain size of the deposited thin film are much larger. The film grown at low substrate temperature do not show any anisotropy. As the substrate temperature is increased, the easy axis of the films alinged itself in the direction parallel to the film plane whereas the hard axis remained in the perpendicular direction. The higher substrate temperature caused the uniaxial magnetic anisotropy, which is very important in magnetic recording devices. The saturation magnetization and optical band gap energy values of 62 emu/cc and 1.75 eV, respectively, were achieved for the film of thickness 500 nm deposited at 400 °C. Higher values of coercivity, squareness and films thickness are associated with the growth of larger grains at higher substrate temperature. |
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Keywords: | Thin films Substrate temperature Parallel magnetic anisotropy Surface morphology Band gap energy |
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