首页 | 本学科首页   官方微博 | 高级检索  
     


The electronic structure of alkali-metal layers on semiconductor surfaces
Authors:B. Reihl  R. Dudde  L. S. O. Johansson  K. O. Magnusson
Affiliation:(1) IBM Research Division, Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland;(2) Present address: Bundesministerium für Forschung und Technologie, Heinemannstrasse 2, W-5300 Bonn 2, Fed. Rep. Germany;(3) Present address: Dept. of Synchrotron Radiation Physics, University of Lund, S-22362, Lund, Sweden;(4) Present address: Dept. of Natural Science, University of Karlstad, Box 9501, S-65009 Karlstad, Sweden
Abstract:
Alkali-metal layers on semiconductor surfaces are model systems for metal-semiconductor contacts, Schottky barriers, and metallization processes. The strong decrease of the work function as a function of alkali-metal coverage is also technically made use of. Recently, however, interest in these systems is growing owing to ongoing controversial discussions about questions like: Is the adsorbate system at monolayer coverage metallic or semiconducting, and does the metallization take place in the alkali overlayer or in the top layer of the semiconductor? Is the bonding ionic or covalent? What ist the absolute coverage at saturation? What are the adsorption sites? Do all alkali metals behave similar on the same semiconductor surface? We try to answer some of the questions for Li, Na, K and Cs on Si(111)(2×1), K and Cs on Si(111)(7×7) and on GaAs(110), and Na and K on Si(100)(2×1) employing the techniques of direct and inverse photoemission.
Keywords:71.30.+h  73.40.Ns  79.60.Gs
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号