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Strongly Correlated Effect in TiS2
Authors:QIAO Yan-Bin  ZHONG Guo-Hua  LI Di  WANG Jiang-Long  QIN Xiao-Ying  ZENG Zhi
Affiliation:Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031
Abstract:The thermoelectric compound TiS2 is studied by using the full-potential linearized augmented plane-wave method on the density functional theory with the generalized gradient approximation (GGA) as well as the on-site Coulomb interaction correction (+U). The Seebeck coefficient of TiS2 is calculated based on the electronic structure obtained within the GGA under the consideration of the on-site Coulomb interaction. The calculated Seebeck coefficient at 300K shows that Coulomb interaction U in the range of 4.97--5.42eV is important to reproduce the experimental data. The obtained energy gap Eg around 0.05eV indicates that TiS2 is an indirect narrow-gap semiconductor.
Keywords:72.15.Jf  71.22.+i  71.27.+a
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