Strongly Correlated Effect in TiS2 |
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Authors: | QIAO Yan-Bin ZHONG Guo-Hua LI Di WANG Jiang-Long QIN Xiao-Ying ZENG Zhi |
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Affiliation: | Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 |
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Abstract: | The thermoelectric compound TiS2 is studied by using the full-potential linearized augmented plane-wave method on the density functional theory with the generalized gradient approximation (GGA) as well as the on-site Coulomb interaction correction (+U). The Seebeck coefficient of TiS2 is calculated based on the electronic structure obtained within the GGA under the consideration of the on-site Coulomb interaction. The calculated Seebeck coefficient at 300K shows that Coulomb interaction U in the range of 4.97--5.42eV is important to reproduce the experimental data. The obtained energy gap Eg around 0.05eV indicates that TiS2 is an indirect narrow-gap semiconductor. |
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Keywords: | 72.15.Jf 71.22.+i 71.27.+a |
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