Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors |
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| Authors: | RY Li ZG Wang B Xu P Jin X Guo M Chen |
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| Institution: | (1) Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, P.R. China;(2) Laboratory of Photoelectronics Technology, Beijing University of Technology, Beijing, 100022, P.R. China |
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| Abstract: | The interface of wet oxidized Al0.97Ga0.03As/GaAs in a distributed Bragg reflector (DBR) structure has been studied by means of transmission electron microscopy and Raman spectroscopy. With the extension of oxidation time, the oxide/GaAs interfaces are not abrupt any more. There is an amorphous film near the oxide/GaAs interface, which is Ga2O3 related to the prolonged heating. In the samples oxidized for 10 and 20 min, there are some fissures along the oxidized AlGaAs/GaAs interfaces. In the samples oxidized or in situ annealed for long time, no such fissures are present due to the complete removal of the volatile products. PACS 68.55.Jk; 68.55.Nq; 68.65.+g; 81.65.Mq |
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