Characterization of a high-power tapered semiconductor amplifier system |
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Authors: | D Voigt EC Schilder RJC Spreeuw HB van Linden van den Heuvell |
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Institution: | (1) Van der Waals–Zeeman Instituut, Universiteit van Amsterdam, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands, NL |
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Abstract: | We have characterized a semiconductor amplifier laser system which provides up to 200 mW output after a single-mode optical
fiber at 780 nm wavelength. The system is based on a tapered semiconductor gain element, which amplifies the output of a narrow-linewidth
diode laser. Gain and saturation are discussed as a function of operating temperature and injection current. The spectral
properties of the amplifier are investigated with a grating spectrometer. Amplified spontaneous emission (ASE) causes a spectral
background with a width of 4 nm FWHM. The ASE background was suppressed to below our detection limit by a proper choice of
operating current and temperature and by sending the light through a single-mode optical fiber. The final ASE spectral density
was less than 0.1 nW/MHz, i.e. less than 0.2% of the optical power. Related to an optical transition linewidth of Γ/2π=6 MHz
for rubidium, this gives a background suppression of better than -82 dB. An indication of the beam quality is provided by
the fiber coupling efficiency of up to 59%. The application of the amplifier system as a laser source for atom-optical experiments
is discussed.
Received: 8 May 2000 / Revised version: 21 September 2000 / Published online: 7 February 2001 |
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Keywords: | PACS: 42 55 Px 42 60 Da 32 80 Pj |
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