大功率低功耗快速软恢复SiGeC功率开关二极管

为满足电力电子电路对功率开关二极管高频化的发展要求，提出了一种大功率低功耗快速软恢复p⁺(SiGeC)-n^--n⁺异质结二极管.与常规的Si p-i-n二极管相比，在正向电流密度不超过1000 A/cm²情况下，p⁺(SiGeC)-n^--n⁺二极管的正向压降减少了约1/5，有效降低了器件的通态功耗；反向恢复时间缩短了一半多，反向峰值电流降低了约25%，软 关键词： 快速软恢复 大功率低功耗 SiGeC/Si异质结功率二极管

High-power low-loss fast and soft recovery SiGeC switching power diodes

A high-power low-loss fast and soft recovery p⁺(SiGeC)-n^--n⁺ heterojunction diode is presented to meet the need of higher frequency in power electron circuits. Compared with conventional Si p-i-n diodes, the forward voltage drop of p⁺ (SiGeC)-n^--n⁺ diodes is reduced by 20% when the operating current density does not exceed 1000 A/cm², which effectively reduces the operating loss. The reverse recovery characteristics of the novel SiGeC diodes are much improved. The reverse recovery time is more than half shorter, the peak reverse current is 25% lower and the softness factor is increased 1.3 times. Furthermore, the leakage current and reverse block voltage are almost unchanged. Ge and C content is the important parameters to affect the characteristics of p⁺ (SiGeC)-n^--n⁺, which offers more freedom to device design.