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Effect of bilayer structure and a SrRuO3 buffer layer on ferroelectric properties of BiFeO3 thin films |
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| Authors: | Jiagang Wu Sha Qiao Chaohui Pu Dingquan Xiao John Wang Jianguo Zhu |
| Institution: | 1. Department of Materials Science, Sichuan University, Chengdu, 610064, P.R. China 2. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P.R. China 3. Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore |
| Abstract: | Effects of the BiFe0.95Mn0.05O3 thickness and a SrRuO3 (SRO) buffer layer on the microstructure and electrical properties of BiFeO3/BiFe0.95Mn0.05O3 (BFO/BFMO) bilayered thin films were investigated, where BFO/BFMO bilayered thin films were fabricated on the SRO/Pt/Ti/SiO2/Si(100) substrate by a radio frequency sputtering. All thin films are of a pure perovskite structure with a mixture of (110) and (111) orientations regardless of the BFMO layer thickness. Dense microstructure is demonstrated in all thin films because of the introduction of BFMO layers. The SRO buffer layer can also further improve the ferroelectric properties of BFO/BFMO bilayered thin films as compared with those of these thin films without a SRO buffer layer. The BFO/BFMO bilayered thin film with a thickness ratio of 220/120 has an enhanced ferroelectric behavior of 2P r??165.23???C/cm2 and 2E c??518.56?kV/cm, together with a good fatigue endurance. Therefore, it is an effective way to enhance the ferroelectric and fatigue properties of bismuth ferrite thin films by constructing such a bilayered structure and using a SRO buffer layer. |
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