Arsenic-implanted polysilicon layers |
| |
Authors: | H Ryssel H Iberl M Bleier G Prinke K Haberger H Kranz |
| |
Institution: | 1. Fraunhofer-Institut für Festk?rpertechnologie, Paul-Gerhardt-Allee 42, D-8000, München 60, Germany
|
| |
Abstract: | The diffusion behavior of implanted arsenic in polycrystalline silicon was investigated, using backscattering and electrical
measurements. The diffusion coefficient isD=8.5×10−3 exp (−2.74/kT) for polycrystalline silicon deposited on freshly-etched silicon andD=1.66 exp (−3.22/kT) for the deposition on silicon having natural oxide. At the interface to the single-crystalline silicon,
a pile-up of arsenic occurs, which depends also on the surface treatment prior to the deposition of the polycrystalline silicon. |
| |
Keywords: | 72 20 73 85 30 |
本文献已被 SpringerLink 等数据库收录! |
|