基于ZnSe的有机-无机异质结电致发光器件

以电子束蒸发的方法制备硒化锌(ZnSe)薄膜，研究了基于ZnSe的有机-无机异质结电致发光器件.在双层器件ITO/ZnSe(50nm)/Alq₃(12nm)/Al中看到了峰值位于578nm的ZnSe电致发光，却很难得到单层器件ITO/ZnSe(50—120nm)/Al的电致发光；在此基础上进一步引入有机空穴传输层(HTL)，通过改变器件的结构，讨论了ZnSe对有机-无机异质结器件ITO/HTL/ZnSe/Alq₃/Al电致发光特性的影响.其电致发光光谱的研究结果证实了ZnSe在器件中的作用：ZnSe既起传输电子的作用，也起到传输空穴的作用，还作为发光层.并对ZnSe的发光机理进行了讨论.关键词：硒化锌有机-无机异质结电致发光空穴传输层

ZnSe-based organic-inorganic heterostructure diodes

ZnSe-based organic-inorganic heterostructure diodes in which ZnSe layer was fabricated by electron-beam evaporation were studied. Electroluminescence from ZnSe peaking at 578nm was observed from bilayer device ITO/ZnSe(50nm)/Alq₃(12nm)/Al, but it is difficult to observe any EL emission from single-layer diode ITO/ZnSe(50—120nm)/Al. Based on this, we further introduced a PVK or NPB hole-transporting layer (HTL), to make trilayer devices ITO/HTL/ZnSe/Alq₃/Al to investigate the influence of ZnSe layer on the emission of the trilayer devices by varying the device structure. Our experimental data of EL emission confirm the roles played by ZnSe in these devices of transporting not only electrons but also holes, as well as acting as an emissive layer. Furthermore, a luminescence mechanism of charge carriers injection luminescence in ZnSe layer is suggested.