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RF hydrogen plasma influence on shallow and deep levels in crystalline silicon |
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| Authors: | A. Szekeres S. S. Simeonov E. Kafedjiiska |
| Affiliation: | a Institute of Solid State Physics, Boul. Lenin 72, 1784, Sofia, Bulgaria |
| Abstract: | Changes in charge states in c-silicon caused by hydrogen plasma treatment at temperatures from 293 to 573 K are studied by using C-V and DLTS techniques. Generation of acceptor and donor type defects is observed in the region of about 1 μm from the Si surface. |
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