掺铜及掺铝多孔硅的光致发光及其发光机理

分别将特定杂质铜和铝引入多孔硅后，观察到了杂质铜和铝所引起的附加发光带：对于没有掺铜的多孔硅，其光致发光谱只有一个发光带；而掺过铜的多孔硅，其光致发光谱出现两个发光带，其中能量较低的发光带随主发光带而变化。在掺铝多孔硅的光致发光谱中，则出现4个与铝杂质能级有关发光带。我们认为上述与杂质有关的发光带是由截流子在杂质深能级上复合所致。

Carrier recombination processes in copper and aluminium doped porous silicon

The additional luminescence bands induced by introducing copper and aluminum into porous silicon have been observed. Before copper doping, only one photoluminescence band is detected, and two luminescence bands are observed after the copper doping. In the case of aluminum doping, five luminescence bands have been recorded. In the light of quantum confinement model and the deep energy levels introduced by the impurities, it is concluded that the above-mentioned luminescence bands are related to the specific dopants.