Spin accumulation in forward-biased MnAs/GaAs Schottky diodes |
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Authors: | Stephens J Berezovsky J McGuire J P Sham L J Gossard A C Awschalom D D |
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Institution: | Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA. |
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Abstract: | We describe a new means for all-electrical generation of spin polarization in semiconductors. In contrast with spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe accumulation at the metal-semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemporal Kerr microscopy is used to image the electron spin and the resulting dynamic nuclear polarization that arises from the nonequilibrium carrier polarization. |
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