Interdiffusion in two-layer Pd/Ag films II. “Cold” homogenization mechanisms |
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Authors: | V. M. Kosevich A. N. Gladkikh M. V. Karpovskyi V. N. Klimenko |
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Affiliation: | (1) Department of Theoretical and Experimental Physics, Kharkov Polytechnical Institute, Kharkov, Ukraine;(2) Present address: Department of Electronic Devices and Materials, Tel Aviv University, 69978 Tel Aviv, Israel;(3) Present address: School of Physics and Astronomy, Tel Aviv University, 69978 Tel Aviv, Israel |
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Abstract: | Interdiffusion processes in thin epitaxial polycrystalline Pd/Ag films in the temperature range 20–500°C are studied by transmission electron microscopy, electron diffraction and electrical resistance methods. Homogenization is investigated both during condensation and under conditions of postcondensation annealing.The basic processes of homogenization associated with GB diffusion along migrating boundaries. It is found that in real polycrystal films with wide spectrum of grain sizes few mechanisms can occur simultaneously or subsequently: recrystallization induced diffusion, diffusion induced grain boundary migration, activation of bulk diffusion in fine grain clusters, bulk diffusion through interphase boundary. The conditions for prevailing one of them can be provided by changing condensation and postcondensation annealing temperatures or by choosing certain grain size. |
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Keywords: | grain boundary migration interdiffusion recrystallization |
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