Evolution of Structure of the Precursor During Sol-Gel Processing of ZnO and Low Temperature Formation of Thin Films

ZnO thin films were prepared on silicon substrate with Pt electrode by the sol-gel processing using Zn alkoxide solution prepared from Zn(NO₃)₂·6H₂O and 2-methoxyethanol. FT-IR spectroscopy showed the presence of Zn species in the alkoxide, with methoxyethoxide and nitrato groups as coordination ligands, indicating formation of Zn(NO₃)(OCH₂CH₂OCH₃). Smooth and homogeneous thin films were obtained by heat treating coating gel films in the temperature range from 250 to 500°C. The ZnO thin films exhibited a preferred growth of crystals with c-axis perpendicular to the Si substrate surface when fired at 250°C. It was discussed that the presence of nitrogen atoms in precursors had affected the phase development of crystals and was the basis of the structural relaxation for crystallization at low temperature.