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Photoluminescence and X-ray characterisation of Si/Si1−xGex multiple quantum wells |
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| Authors: | T. P. Sidiki A. Rü hm W. -X. Ni G. V. Hansson C. M. Sotomayor Torres |
| Affiliation: | a Institute of Materials Science, Department of Electrical Engineering, University of Wuppertal, D-42097 Wuppertal, Germany b Institute of Materials Science and Department of Physics, University of Wuppertal, D-42285 Wuppertal, Germany c Department of Physics, Linköping University, S-581 83 Linköping, Sweden |
| Abstract: | We present an experimental approach to correlate optical and structural properties of Si/Si1−xGex multiple quantum wells as determined by photoluminescence (PL) and X-ray diffraction, respectively. The optical properties of the quantum wells were characterised by studying the dependence of luminescence on temperature and excitation density. An enhanced PL yield and an increased quenching temperature were observed for a sample grown at 650°C as compared to one grown at 600°C. Pronounced interdiffusion across the multiple quantum well interfaces as well as significant lattice distortions within the SiGe layers have been observed. |
| Keywords: | Multiple quantum well SiGe Photoluminescence X-ray diffraction X-ray reflectivity Interdiffusion Exciton diffusion Interface roughness |
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