Photon-induced reactions of No adsorbed on GaAs(110)

The interaction of cw laser radiation with NO adsorbed on GaAs(110) at 90 K has been studied over a wide range of wavelengths from 457 to 900 nm by high resolution electron energy loss spectroscopy (HREELS), thermal desorption spectroscopy (TDS), and laser induced desorption spectroscopy (LIDS). Adsorption of molecular NO is observed. By varying the incident laser power, it is found that desorption and dissociation of molecular NO are induced by a nonthermal process. By measuring the time profile and the power and wavelength dependence of the desorption signal, the observed desorption and dissociation of NO are attributed to interactions of the adsorbed NO with the photogenerated carriers which migrate to the surface.