Plasmonic laser nanoablation of silicon by the scattering of femtosecond pulses near gold nanospheres |
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Authors: | D Eversole B Luk’yanchuk A Ben-Yakar |
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Institution: | (1) Department of Biomedical Engineering, University of Texas at Austin, Austin, TX 78722, USA;(2) Center for Nanomaterials, University of Texas at Austin, Austin, TX 78722, USA;(3) Agency for Science, Technology and Research, Data Storage Institute, 117608 Singapore, Singapore;(4) Department of Mechanical Engineering, University of Texas at Austin, Austin, TX 78722, USA |
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Abstract: | We present the fabrication of nanostructures ablated on silicon(100) by the plasmonic scattering of 780 nm, 220 fs laser pulses
in the near-field of gold nanospheres. We take advantage of the enhanced plasmonic scattering of ultrashort laser light in
the particle near-field to ablate well-defined nanocraters. Gold nanospheres of 150 nm diameter are deposited onto a silicon
surface and irradiated with a single laser pulse. We studied the effect of laser polarization on the morphology of ablated
nanostructures and estimated the minimum fluence for plasmonic nanoablation. When the polarization of the incident radiation
is directed at a 45° angle into the substrate surface, a near-field enhancement of 23.1±7.6 is measured, reducing the required
silicon ablation fluence from 191±14 mJ/cm2 to 8.2±2.9 mJ/cm2. Enhancements are also measured for laser polarizations parallel to the substrate surface when the substrate is angled 0°
and 45° to the incident irradiation, giving enhancements of 6.9±0.6 and 4.1±1.3, respectively. Generated nanocrater morphologies
show a direct imprint of the particle dipolar scattering region, as predicted in our theoretical calculations. The measured
near-field enhancement values agree well with the maximum field enhancements obtained in our calculations. The agreement between
theory and measurements supports that the nanocraters are indeed formed by the enhanced plasmonic scattering in the near-field
of the nanoparticles.
PACS 42.62.-b; 52.38.Mf; 81.65.Cf; 81.16.-c; 78.67.Bf |
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