Determination of boron in silicon by SIMS with the matrix ion species ratio method |
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Authors: | F. Michiels and F. Adams |
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Affiliation: | (1) Department of Chemistry, University of Antwerp (U.I.A.), B-2610 Wilrijk, Antwerpen, Belgium |
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Abstract: | Summary In quantitative SIMS, the oxygen content of the sample surface proves to be a very important analytical parameter. The matrix ion species ratio method (MISR) was used to investigate the influence of the presence of oxygen on the determination of boron in silicon. By analysing standard samples at conditions of different oxygen coverage, the relation between the sensitivity of boron and the oxygen content of the sample surface, as indexed by the SiO+/Si3+ matrix ion species ratio, was established. The influence of the primary ion current density on this relation was investigated. The MISR procedure proves to be a suitable method to perform quantitative determinations (relative error < 10%) in conditions of changing oxygen content on the sample surface.
Bestimmung von Bor in Silicium durch SIMS mit der Matrix Ion Species Ratio Method |
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