Effect of frequency on the deposition of microcrystalline silicon from tetrachlorosilane in low-pressure r.f. plasmas |
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| Authors: | E. Grossman A. Grill R. Avni |
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| Affiliation: | (1) Materials Engineering Department, Ben-Gurion University of the Negev, 84105 Beer-Sheva, Israel;(2) the Division of Chemistry Nuclear Research Center-negev, P.O.B. 9001, Beer-Sheva, Israel |
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| Abstract: | The efficiency of reduction of silicon tetrachloride and the rate of deposition of Si in a low-pressure r.f. plasma was investigated at two frequencies (0.4 and 27 MHz) as a function of position with regard to the rf coil, pressure, and time of deposition. At 27 MHz the decomposition efficiency of silicon tetrachloride and the deposition rate of Si are about three times higher than at 0.4 MHz. |
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| Keywords: | r.f. plasma silicon deposition experimental |
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