Removal of nanoparticles on silicon wafer using a self-channeled plasma filament

The effective removal of nanoparticles from a silicon wafer surface was demonstrated using the self-channeled plasma filament excited by a femtosecond (130?fs) Ti:sapphire laser (?? _p=790?nm). The photoinduced self-channeled plasma filament in air reached a length of approximately 110?C130?mm from the first focal spot with diameters ranging from 40 to 50???m at input intensities of more than 1.0×10¹⁴?W/cm². By the scan of wafer using the X?CY?CZ stage during self-channeled plasma filament, the removal variation of nanoparticles on surface was observed in situ before and after the plasma filament occurred. The cleaning efficiency was strongly dependent on the gap distance between the plasma filament and the surface. The removal efficiency of nanoparticles reached 96?% with no damage to the surface when the gap was 150???m.