| ZnSe－CdZnSe多量子阱F－P腔光双稳器件的室温皮秒反射式激子光双稳 |
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| 引用本文： | 栗红玉,申德振.ZnSe－CdZnSe多量子阱F－P腔光双稳器件的室温皮秒反射式激子光双稳[J].发光学报,1996,17(2):172-174. |
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| 作者姓名： | 栗红玉 申德振 |
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| 作者单位： | 1. 中国科学院激发态物理开放研究实验室, 长春130021;2. 中国科学院长春物理研究所, 长春130021 |
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| 摘 要： | 近年来,半导体超晶格的光双稳器件由于功耗低、体积小、易于集成优点,引起国内外人们的广泛重视,特别是经优化的F-P腔光双稳器件,其反射式光双稳比透射式光双稳有很多的优点.
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| 关 键 词： | 硒化锌 CdZnSe 光双稳器件 激子光双稳 |
| 收稿时间： | 1996-01-11 |
EXCITONIC OPTICAL BISTABILITY IN ZnSe-CdZnSe MQWs OPTICAL BISTABLE DEVICE ON REFLECTION AT RT |
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| Li Hongyu,Shen Dezhen,Zhang Jiying,Fan Xiwu,Yang Baojun.EXCITONIC OPTICAL BISTABILITY IN ZnSe-CdZnSe MQWs OPTICAL BISTABLE DEVICE ON REFLECTION AT RT[J].Chinese Journal of Luminescence,1996,17(2):172-174. |
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| Authors: | Li Hongyu Shen Dezhen Zhang Jiying Fan Xiwu Yang Baojun |
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| Institution: | 1. Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021;2. Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun 130021 |
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| Abstract: | The excitonic optical bistability in ZnSe-CdZnSe MQWs optical bistable device has been studied on reflection at room temperature for the first time.The research result indicates that the threshold and contrast ratio for the optical bistability in ZnSe-CdZnSe MQWs optical bistable device are about 180 kW/cm2 and 6:1,respectively.The major nonlinear mechanism for the optical bistability is due to the phase space filling of excitonic states and excitonic band broadening. |
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