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Nd1.85Ce0.15CuO4-δ单晶c-轴方向电阻的低场行为
引用本文:李配军,王智河,白 忠,聂 阳,邱 里,徐小农. Nd1.85Ce0.15CuO4-δ单晶c-轴方向电阻的低场行为[J]. 物理学报, 2006, 55(6): 3018-3021
作者姓名:李配军  王智河  白 忠  聂 阳  邱 里  徐小农
作者单位:南京大学物理系固体微结构国家重点实验室,南京 210093
基金项目:国家自然科学基金(批准号:10174033)和南京大学预研基金资助的课题.
摘    要:采用自助熔剂缓冷法成功地生长出了Nd1.85Ce0. 15CuO4-δ单晶,其零场下零电阻温度约为21K. 在0—0.5T范围内分别测量了磁场平行和垂直样品表面的电阻转变曲线以及0.5T不同角度下的电阻转变曲线. 结果显示磁场平行和垂直样品表面时的转变温度Tp随磁场的变化均服从H=H0(1-Tp(h)/Tp(0))2关系. 0.5T关键词:1.85Ce0.15CuO4-δ单晶')" href="#">Nd1.85Ce0.15CuO4-δ单晶输运性质

关 键 词:Nd1.85Ce0.15CuO4-δ单晶  输运性质
文章编号:1000-3290/2006/55(06)/3018-04
收稿时间:2005-05-10
修稿时间:2005-05-102005-09-15

Resistivity of Nd1.85Ce0.15CuO4-δ single crystal along c-axis in lower field
Li Pei-Jun,Wang Zhi-He,Bai Zhong,Nie Yang,Qiu Li and Xu Xiao-Nong. Resistivity of Nd1.85Ce0.15CuO4-δ single crystal along c-axis in lower field[J]. Acta Physica Sinica, 2006, 55(6): 3018-3021
Authors:Li Pei-Jun  Wang Zhi-He  Bai Zhong  Nie Yang  Qiu Li  Xu Xiao-Nong
Affiliation:National Laboratory of Solid State Microstructures , Department of Physics, Nanjing University, Nanjing 210093, China
Abstract:Nd1.85Ce0.15CuO4-δsingle crystals with zero-resistance temperature Tc0≈21K were successfully grown by self-flux slow cooling method. We have measured the resistivity transition curves along the c-axis in different fields parallel or perpendicular to the sample surface, respectively, and at fixed field H=0.5T for various angles. The result shows that the field dependence of differential-resistance peak temperature Tp follows the formula H=H0(1-Tp(h)/Tp(0))2 for H//c-axis and H//ab-plane, respectively. The angular dependence of peak temperature Tp can be scaled by the effective mass model as Tp∝H1/2(cos2θ+sin2θ/γ2)1/4. The anisotropic parameter γ of the crystal is about 45.
Keywords:Nd1.85Ce0.15CuO4-δ single crystals  transition character
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