BiFeO3/Zn1−xMnxO bilayered thin films |
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| Authors: | Jiagang Wu John WangDingquan Xiao Jianguo Zhu |
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| Institution: | a Department of Materials Science, Sichuan University, 610064, PR China
b Department of Materials Science and Engineering, National University of Singapore, 117574, Singapore |
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| Abstract: | BiFeO3/Zn1−xMnxO (x = 0-0.08) bilayered thin films were deposited on the SrRuO3/Pt/TiO2/SiO2/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO3/Zn1−xMnxO. BiFeO3/Zn1−xMnxO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2Pr ∼ 121.0-130.6 μC/cm2 was measured for BiFeO3/Zn1−xMnxO. BiFeO3/Zn1−xMnxO (x = 0.04) bilayer exhibits a highest Ms value of ∼15.2 emu/cm3, owing to the presence of the magnetic Zn0.96Mn0.04O layer with an enhanced Ms value. |
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| Keywords: | BiFeO3/Zn1&minus xMnxO Bilayered thin films Magnetron sputtering Electrical properties |
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