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Radiative recombination of epitaxial In1−x Ga x As layers grown on indium phosphide substrates
Authors:Chao Chen  S. A. Manego  S. A. Malyshev  V. A. Bykovskii  A. A. Kutas  M. I. Tarasik
Affiliation:(1) Siamyn University, 220080 Minsk, Chinese People's Republic;(2) Institute of Electronics, Academy of Sciences of Belarus, 220080 Minsk;(3) Minsk Research Institute of Radiomaterials, 220080 Minsk;(4) Belarusian State University, 4, F. Skorina Av., 220080 Minsk
Abstract:
Keywords:epitaxial layer    heterostructure    microinhomogeneities    compression stress    radiative recombination    x-ray diffractograms
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