Controlled growth and field emission of vertically aligned AlN nanostructures with different morphologies |
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Authors: | Liu Fei Su Zan-Ji Liang Wei-Jie Mo Fu-Yao Li Li Deng Shao-Zhi Chen Jun and Xu Ning-Sheng |
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Institution: | Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China |
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Abstract: | The controllable growth of three different morphologies of AlN
nanostructures (nanorod, nanotip and nanocrater) arrays are
successfully realized by using chemical vapour deposition (CVD)
technology. All three nanostructures are of single crystal h-AlN
with a growth orientation of 001]. Their growth is attributed to
the vapour-liquid-solid (VLS) mechanism. To investigate the factors
affecting field emission (FE) properties of AlN nanostructures, we
compare their FE behaviours in several aspects. Experimental results
show that AlN nanocrater arrays possess the best FE properties, such
as a threshold field of 7.2~V/$\mu $m and an emission current
fluctuation lower than 4{\%}. Moreover, the three AlN nanostructures
all have good field emission properties compared with a number of
other excellent cathode nanomaterials, which suggests that they are
future promising FE nanomaterials. |
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Keywords: | AlN field emission (FE) vapour-liquid-solid (VLS) chemical vapour deposition (CVD) |
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