| 膜去溶进样高分辨电感耦合等离子体质谱法测定半导体级氢氟酸中杂质元素 |
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| 引用本文： | 陈黎明.膜去溶进样高分辨电感耦合等离子体质谱法测定半导体级氢氟酸中杂质元素[J].中国无机分析化学,2012,2(2):61-64. |
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| 作者姓名： | 陈黎明 |
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| 作者单位： | 上海市计量测试技术研究院 |
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| 基金项目： | 国家科技部资助项目(2009IM032300) |
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| 摘 要： | 利用高分辨电感耦合等离子体质谱法测定半导体级高纯氢氟酸中的痕量金属杂质,用膜去溶进样系统直接进样检测,无需前处理、快速,避免了在样品前处理时的污染问题。高分辨电感耦合等离子体质谱法可以消除多分子离子干扰,降低检出限,提高定量准确性。方法的检出限为0.09～37.07ng/L,加标回收率为92.3%～116.8%。方法简单,结果可靠,适用于高纯氢氟酸中痕量元素的快速测定。
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| 关 键 词： | 膜去溶 半导体级氢氟酸 高分辨电感耦合等离子体质谱 杂质元素 |
| 收稿时间： | 2/14/2012 1:07:37 PM |
| 修稿时间： | 2012/4/11 0:00:00 |
Determination of Impurity Elements in Semiconductor-grade Hydrofluoric Acid by High-resolution Inductively Coupled Plasma Mass Spectrometer (HR-ICP-MS) with Membrane Desolvation |
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| CHEN Liming.Determination of Impurity Elements in Semiconductor-grade Hydrofluoric Acid by High-resolution Inductively Coupled Plasma Mass Spectrometer (HR-ICP-MS) with Membrane Desolvation[J].Chinese Journal of Inorganic Analytical Chemistry,2012,2(2):61-64. |
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| Authors: | CHEN Liming |
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| Institution: | 1. Shanghai Institute of Measurement and Testing Technology |
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| Abstract: | Determination of trace metal in semiconductor grade hydrofluoric acid by HR-ICP-MS with Membrane Desolvation, all elements were directed analyzed with standard addition. The result indicate that the method is easier and fast, the method avoid the pollution of sample. HR-ICP-MS can eliminate multimolecular ion disruption, reduce detect limit, improve quantitative accuracy. The detection limits were 0.09 to 37.07 ng.L-1 with recoveries of 92.3to113.6 %. |
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| Keywords: | Membrane Desolvation semiconductor grade nitric acid HR-ICP-MS impurity elemnent |
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