Magneto-piezospectroscopy of acceptors in tetrahedrally coordinated semiconductors

This paper presents a study of the magnetospectroscopy of acceptors in elemental group-IV semiconductors in the presence of uniaxial stress. We use a formulation of the effect of stress on the transition probabilities for optical absorption which represents a considerable simplification over previous treatments. We give an analysis of both the longitudinal and the transverse magneto-spectroscopy of acceptors in semiconductors having the diamond structure under uniaxial stress. The results are used to determine the values of theg-factors for two levels of Ga acceptors in Ge by comparing the present results with the experimental data. Due to the relevance of its scientific content, this paper has been given priority by the Journal Direction.