Phonons in surface photovoltage of GaAs |
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| Authors: | A. Morawski J. Łagowski |
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| Affiliation: | Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland |
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| Abstract: | ![]()
Oscillatory surface photovoltage is reported in GaAs at 4.2°K, characterized by two series of minima. Dominating series is attributed to the capture of photoexcited electrons by surface states with emission of phonons. Second, weak series coincides with oscillations in photoconductivity. |
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