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Selective growth of individual multiwalled carbon nanotubes
Authors:R. E. Morjan   M. S. Kabir   S. W. Lee   O. A. Nerushev   P. Lundgren   S. Bengtsson   Y. W. Park  E. E. B. Campbell  
Affiliation:a Department of Experimental Physics, School of Physics and Engineering Physics, Göteborg University and Chalmers University of Technology, SE-41296, Göteborg, Sweden;b Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296, Göteborg, Sweden;c School of Physics and Condensed Matter Research Institute, Seoul National University, Seoul 151-747, South Korea
Abstract:
Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.
Keywords:Plasma-enhanced chemical vapour deposition   PECVD   Multiwalled carbon nanotubes   Controlled individual growth
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