InGaAs/Si3N4 interface obtained in ultrahigh vacuum multipolar plasma: In-situ control by ellipsometry and electrical characterization

A multipolar plasma passivation scheme controlled by in-situ ellipsometry has been developed to produce a high electrical quality InGaAs/Si₃N₄ interface. We have demonstrated the possibility to remove all native oxides at the InGaAs surface by heating the sample at 240°C, then using the action of a multipolar H₂ plasma at 185°C, without optical degradation of the surface. The passivation by a native nitride layer is then performed using a N₂ plasma, and Si₃N₄ is deposited. The treatment induces a reduction of the density of interface states N_ss(E), and also a change of the nature of these interface states as shown by a reduction in the capture cross section σ_n(E).