同步辐射激发直接干化学刻蚀

同步辐射激发直接光化学刻蚀是近年来发展的一项新技术 ,它不需要常规光刻中的光刻胶工艺 ,用表面光化学反应直接将图形写到半导体材料的表面上。由于所用的同步辐射在真空紫外 (VUV)波段 ,理论上的分辨率可以达到电子学的量子极限 ,且没有常规工艺中的表面损伤和化学污染 ,是一种非常具有应用潜力的技术。本文的最后部份重点讨论了与上述技术密切相关的VUV和软X射线激发的表面光化学反应机理。

SYNCHROTRON RADIATION EXCITED PHOTOCHEMICAL ETCHING

The synchrotron radiation excited photochemical etching has been developed in recent years. A pattern can be written on the substrate directly by this method without using photoresist. Because the vacuum ultraviolet (VUV) and soft x ray are used as the excitation source, the resolution can be reach to the quantum limitation of electronics. By this method, the surface with little damage and lower contamination can be achieved. It is an important and potential technique in the future. A new interesting field related to this technique, the VUV and soft X ray excited surface photochemical reaction is also reviewed.